Supercritical Coulomb Impurities in Gapped Graphene
نویسندگان
چکیده
We study the problem of Coulomb field-induced charging of the ground state in a system of 2D massive Dirac particles – gapped graphene. As in its 3D QED counterpart, the critical Coulomb coupling is renormalized to higher values, compared to the massless case. We find that in gapped graphene a novel supercritical regime is possible, where the screening charge is comparable to the impurity charge, thus leading to suppression of the Coulomb field at nanometer scales. We corroborate this with numerical solution of the tight-binding problem on the honeycomb lattice.
منابع مشابه
Scattering theory and ground-state energy of Dirac fermions in graphene with two Coulomb impurities
We study the physics of Dirac fermions in a gapped graphene monolayer containing two Coulomb impurities. For the case of equal impurity charges, we discuss the ground-state energy using the linear combination of atomic orbitals (LCAO) approach. For opposite charges of the Coulomb centers, an electric dipole potential results at large distances. We provide a nonperturbative analysis of the corre...
متن کاملScreening of coulomb impurities in graphene.
We calculate exactly the vacuum polarization charge density in the field of a subcritical Coulomb impurity, Z|e|/r, in graphene. Our analysis is based on the exact electron Green's function, obtained by using the operator method, and leads to results that are exact in the parameter Zalpha, where alpha is the "fine-structure constant" of graphene. Taking into account also electron-electron inter...
متن کاملTheory of charged impurity scattering in two-dimensional graphene
Wereview thephysics of charged impurities in the vicinity of graphene. The long-range nature of Coulomb impurities affects both the nature of the ground state density profile and graphene’s transport properties. We discuss the screening of a single Coulomb impurity and the ensemble averaged density profile of graphene in the presence of many randomly distributed impurities. Finally, we discuss ...
متن کاملFabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities.
Owing to its relativistic low-energy charge carriers, the interaction between graphene and various impurities leads to a wealth of new physics and degrees of freedom to control electronic devices. In particular, the behavior of graphene's charge carriers in response to potentials from charged Coulomb impurities is predicted to differ significantly from that of most materials. Scanning tunneling...
متن کاملEffect of charged impurity correlations on transport in monolayer and bilayer graphene
We study both monolayer and bilayer graphene transport properties taking into account the presence of correlations in the spatial distribution of charged impurities. In particular we find that the experimentally observed sublinear scaling of the graphene conductivity can be naturally explained as arising from impurity correlation effects in the Coulomb disorder, with no need to assume the prese...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2008